IndiumV3, Main, Repository, bibRecord, 002499

Structural analysis of site-controlled InAs/InP quantum dots

Identifieur interne : 002499 ( Main/Repository ); précédent : 002498; suivant : 002500

Structural analysis of site-controlled InAs/InP quantum dots

Auteurs : RBID : Pascal:11-0472718

Descripteurs français

Pascal (Inist)
- Analyse structurale, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Point quantique, Nanomatériau, Méthode MOCVD, Aire sélective, Croissance sélective, Lithographie, Plasma couplé inductivement, Gravure plasma, Gravure faisceau ionique, Microscopie électronique balayage transmission, Phosphure d'indium, Synthèse nanomatériau, Mécanisme croissance, Méthode croissance Stranski-Krastanov, Nanostructure, Méthode MOVPE, Epitaxie, InAs, InP, 8107T, 8107, 8115G, 5280Y.

English descriptors

KwdEn :
- Epitaxy, Growth mechanism, III-V compound, III-V semiconductors, Indium arsenides, Indium phosphide, Inductively coupled plasma, Ion beam etching, Lithography, MOCVD, MOVPE method, Nanomaterial synthesis, Nanostructured materials, Nanostructures, Plasma etching, Quantum dots, Scanning transmission electron microscopy, Selective area, Selective growth, Stranski-Krastanov growth method, Structural analysis.

Abstract

We present atomic-scale characterization of site-controlled InAs/InP(001) quantum dots grown by metal-organic chemical vapor deposition using nano-area selective area growth. We have developed for this purpose a process combining e-beam lithography, inductively coupled-plasma etching and focused ion beam etching to isolate a few quantum dots. The size, the shape and the composition of the quantum dots are investigated by Scanning Transmission Electron Microscopy. A comparison with the well-known single self-assembled quantum dots highlights the specificities of our growth mode compared to the Stranski-Krastanov growth mode.

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Pascal:11-0472718

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Structural analysis of site-controlled InAs/InP quantum dots</title>
<author><name sortKey="Fain, B" uniqKey="Fain B">B. Fain</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Photonique et de Nanostructures (LPN), CNRS UPR-20, Route de Nozay</s1>
<s2>91460 Marcoussis</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Marcoussis</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Elvira, D" uniqKey="Elvira D">D. Elvira</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Photonique et de Nanostructures (LPN), CNRS UPR-20, Route de Nozay</s1>
<s2>91460 Marcoussis</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Marcoussis</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Le Gratiet, L" uniqKey="Le Gratiet L">L. Le Gratiet</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Photonique et de Nanostructures (LPN), CNRS UPR-20, Route de Nozay</s1>
<s2>91460 Marcoussis</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Marcoussis</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Largeau, L" uniqKey="Largeau L">L. Largeau</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Photonique et de Nanostructures (LPN), CNRS UPR-20, Route de Nozay</s1>
<s2>91460 Marcoussis</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Marcoussis</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Beaudoin, G" uniqKey="Beaudoin G">G. Beaudoin</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Photonique et de Nanostructures (LPN), CNRS UPR-20, Route de Nozay</s1>
<s2>91460 Marcoussis</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Marcoussis</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Troadec, D" uniqKey="Troadec D">D. Troadec</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), Avenue Poincaré</s1>
<s2>59652 Villeneuve d'Ascq</s2>
<s3>FRA</s3>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Nord-Pas-de-Calais</region>
<settlement type="city">Villeneuve d'Ascq</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Abram, I" uniqKey="Abram I">I. Abram</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Photonique et de Nanostructures (LPN), CNRS UPR-20, Route de Nozay</s1>
<s2>91460 Marcoussis</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Marcoussis</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Beveratos, A" uniqKey="Beveratos A">A. Beveratos</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Photonique et de Nanostructures (LPN), CNRS UPR-20, Route de Nozay</s1>
<s2>91460 Marcoussis</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Marcoussis</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Robert Philip, I" uniqKey="Robert Philip I">I. Robert-Philip</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Photonique et de Nanostructures (LPN), CNRS UPR-20, Route de Nozay</s1>
<s2>91460 Marcoussis</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Marcoussis</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Patriarche, G" uniqKey="Patriarche G">G. Patriarche</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Photonique et de Nanostructures (LPN), CNRS UPR-20, Route de Nozay</s1>
<s2>91460 Marcoussis</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Marcoussis</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Sagnes, I" uniqKey="Sagnes I">I. Sagnes</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Photonique et de Nanostructures (LPN), CNRS UPR-20, Route de Nozay</s1>
<s2>91460 Marcoussis</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Marcoussis</settlement>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">11-0472718</idno>
<date when="2011">2011</date>
<idno type="stanalyst">PASCAL 11-0472718 INIST</idno>
<idno type="RBID">Pascal:11-0472718</idno>
<idno type="wicri:Area/Main/Corpus">002656</idno>
<idno type="wicri:Area/Main/Repository">002499</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Epitaxy</term>
<term>Growth mechanism</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Indium phosphide</term>
<term>Inductively coupled plasma</term>
<term>Ion beam etching</term>
<term>Lithography</term>
<term>MOCVD</term>
<term>MOVPE method</term>
<term>Nanomaterial synthesis</term>
<term>Nanostructured materials</term>
<term>Nanostructures</term>
<term>Plasma etching</term>
<term>Quantum dots</term>
<term>Scanning transmission electron microscopy</term>
<term>Selective area</term>
<term>Selective growth</term>
<term>Stranski-Krastanov growth method</term>
<term>Structural analysis</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Analyse structurale</term>
<term>Arséniure d'indium</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Point quantique</term>
<term>Nanomatériau</term>
<term>Méthode MOCVD</term>
<term>Aire sélective</term>
<term>Croissance sélective</term>
<term>Lithographie</term>
<term>Plasma couplé inductivement</term>
<term>Gravure plasma</term>
<term>Gravure faisceau ionique</term>
<term>Microscopie électronique balayage transmission</term>
<term>Phosphure d'indium</term>
<term>Synthèse nanomatériau</term>
<term>Mécanisme croissance</term>
<term>Méthode croissance Stranski-Krastanov</term>
<term>Nanostructure</term>
<term>Méthode MOVPE</term>
<term>Epitaxie</term>
<term>InAs</term>
<term>InP</term>
<term>8107T</term>
<term>8107</term>
<term>8115G</term>
<term>5280Y</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We present atomic-scale characterization of site-controlled InAs/InP(001) quantum dots grown by metal-organic chemical vapor deposition using nano-area selective area growth. We have developed for this purpose a process combining e-beam lithography, inductively coupled-plasma etching and focused ion beam etching to isolate a few quantum dots. The size, the shape and the composition of the quantum dots are investigated by Scanning Transmission Electron Microscopy. A comparison with the well-known single self-assembled quantum dots highlights the specificities of our growth mode compared to the Stranski-Krastanov growth mode.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0>
</fA01>
<fA02 i1="01"><s0>JCRGAE</s0>
</fA02>
<fA03 i2="1"><s0>J. cryst. growth</s0>
</fA03>
<fA05><s2>334</s2>
</fA05>
<fA06><s2>1</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Structural analysis of site-controlled InAs/InP quantum dots</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>FAIN (B.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>ELVIRA (D.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>LE GRATIET (L.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>LARGEAU (L.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>BEAUDOIN (G.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>TROADEC (D.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>ABRAM (I.)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>BEVERATOS (A.)</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>ROBERT-PHILIP (I.)</s1>
</fA11>
<fA11 i1="10" i2="1"><s1>PATRIARCHE (G.)</s1>
</fA11>
<fA11 i1="11" i2="1"><s1>SAGNES (I.)</s1>
</fA11>
<fA14 i1="01"><s1>Laboratoire de Photonique et de Nanostructures (LPN), CNRS UPR-20, Route de Nozay</s1>
<s2>91460 Marcoussis</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), Avenue Poincaré</s1>
<s2>59652 Villeneuve d'Ascq</s2>
<s3>FRA</s3>
<sZ>6 aut.</sZ>
</fA14>
<fA20><s1>37-39</s1>
</fA20>
<fA21><s1>2011</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13507</s2>
<s5>354000505508970040</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2011 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>18 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>11-0472718</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We present atomic-scale characterization of site-controlled InAs/InP(001) quantum dots grown by metal-organic chemical vapor deposition using nano-area selective area growth. We have developed for this purpose a process combining e-beam lithography, inductively coupled-plasma etching and focused ion beam etching to isolate a few quantum dots. The size, the shape and the composition of the quantum dots are investigated by Scanning Transmission Electron Microscopy. A comparison with the well-known single self-assembled quantum dots highlights the specificities of our growth mode compared to the Stranski-Krastanov growth mode.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A07T</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A07Z</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A15G</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B50B80Y</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Analyse structurale</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Structural analysis</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Análisis estructural</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Arséniure d'indium</s0>
<s2>NK</s2>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Point quantique</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Quantum dots</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Nanomatériau</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Nanostructured materials</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Méthode MOCVD</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>MOCVD</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Aire sélective</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Selective area</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Croissance sélective</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Selective growth</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Lithographie</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Lithography</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Plasma couplé inductivement</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Inductively coupled plasma</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Gravure plasma</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Plasma etching</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Grabado plasma</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Gravure faisceau ionique</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Ion beam etching</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Grabado haz iónico</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Microscopie électronique balayage transmission</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Scanning transmission electron microscopy</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Phosphure d'indium</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Indium phosphide</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Indio fosfuro</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Synthèse nanomatériau</s0>
<s5>29</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Nanomaterial synthesis</s0>
<s5>29</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Síntesis nanomaterial</s0>
<s5>29</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Mécanisme croissance</s0>
<s5>30</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Growth mechanism</s0>
<s5>30</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0>
<s5>30</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Méthode croissance Stranski-Krastanov</s0>
<s5>31</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Stranski-Krastanov growth method</s0>
<s5>31</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Método crecimiento Stranski-Krastanov</s0>
<s5>31</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Nanostructure</s0>
<s5>32</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Nanostructures</s0>
<s5>32</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Méthode MOVPE</s0>
<s5>33</s5>
</fC03>
<fC03 i1="20" i2="X" l="ENG"><s0>MOVPE method</s0>
<s5>33</s5>
</fC03>
<fC03 i1="20" i2="X" l="SPA"><s0>Método MOVPE</s0>
<s5>33</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Epitaxie</s0>
<s5>34</s5>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>Epitaxy</s0>
<s5>34</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>8107T</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>8107</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>8115G</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>5280Y</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>325</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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   |texte=   Structural analysis of site-controlled InAs/InP quantum dots
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Structural analysis of site-controlled InAs/InP quantum dots

Structural analysis of site-controlled InAs/InP quantum dots

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